Résumé

It’s known that indium gallium nitride InGaN alloys has a direct band gap varying from 0.7 to 3.4 eV which covers nearly the whole solar spectrum making it material of choice to make tandem solar cells. In other hand, it’s experimentally known that uses of InGaN/GaN multiple quantum well MQW structures in GaN based devices decreases surface recombination and, thus, enhances devices performance. Here, we present a simulation study of multiple quantum well MQW InGaN/GaN solar cells, where cell's active region is formed by a number of InGaN quantum wells (QWs) separated byGaN quantum barriers (QBs). We will present indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on solar cell parameters.

Information

Item Type:	Journal
Divisions:	» Faculté des Sciences et de la Technologie
ePrint ID:	405
Date Deposited:	2015-09-06
Further Information:	Google Scholar
URI:	https://old.univ-soukahras.dz/fr/publication/article/405

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